Semiconductor device and method of forming the semiconductor device

ABSTRACT

A semiconductor device includes a first diffusion region having a first conductivity type, a first SiGe fin formed on the first diffusion region, a second diffusion region having a second conductivity type, and a second SiGe fin formed on the second diffusion region and including a central portion including a first amount of Ge, and a surface portion including a second amount of Ge which is greater than the first amount. A total width of the central portion and the surface portion is substantially equal to a width of the second diffusion region.

RELATED APPLICATIONS

The present Application is a Continuation Application of U.S. patentapplication Ser. No. 15/994,745, which was filed on May 31, 2018, whichis the Divisional Application of U.S. patent application Ser. No.15/279,154, which was filed on Sep. 28, 2016, now (U.S. Pat. No.10,079,233).

BACKGROUND

The present invention relates generally to a semiconductor device andmethod of forming a semiconductor device, and more particularly, amethod of forming a semiconductor device which includes performing ananneal to react a germanium-containing layer with a surface of a SiGefin.

Vertical transport FETs (VFET) have potential advantages overconventional FinFETs in terms of density, performance, powerconsumption, and integration. First, the VFET provides for betterdensity and allows scaling to sub-30 nm contacted poly pitch (CPP).Further, no diffusion break is required between devices, and nesteddevices have very high effective current (Ieff) density and lowcapacitance.

Second, the VFET provides for higher performance and/or lower power. TheVFET provides for faster devices due to higher Ieff and also supportshigher Vmax. Further, Lgate length is not limited by CPP so betterdevice Ion v. Ioff. The Lgate may be about 15 nm, and can be longer orshorter if desired. Further, capacitance may be about comparable forisolated FETs, and VFET capacitance is lower for multi-finger devicesthan lateral FETs. The VFET also eliminates finFET width quantization(saves power by not over-sizing device width), has a large bottom S/Dregion to reduce lateral resistance, and a lower trench silicide (TS)resistance by eliminating top S/D TS. Further, FETs in series fins canavoid TS on both source and drain

Third, the VFET provides improved manufacturability and scaling. TheVFET makes it easier to integrate multi-material stacked structures,provides TS to bottom S/D design flexibility, has a much lower aspectratio for etch and fill, and provides better connectivity which allowsrelaxed TS, contact and MO features.

SUMMARY

An exemplary aspect of the present invention is directed to a method offorming a semiconductor device, includes forming first and second SiGefins on a substrate, forming a protective layer on the first SiGe fin,forming a GeO₂ layer on the second SiGe fin and on the protective layeron the first SiGe fin, and performing an anneal to react thegermanium-containing layer with a surface of the second SiGe fin.

Another exemplary aspect of the present invention is directed to asemiconductor device including a first SiGe fin formed on a substrateand including a first amount of Ge, and a second SiGe fin formed on asubstrate and including a central portion including a second amount ofGe which is substantially equal to the first amount, and a surfaceportion including a third amount of Ge which is at least 20% greaterthan the second amount.

Another exemplary aspect of the present invention is directed to amethod of forming a semiconductor device. The method includes forming afirst SiGe fin on a substrate on an nFET side of the semiconductordevice, the first SiGe fin including a first amount of Ge, forming asecond SiGe fin on the substrate on a pFET side of the semiconductordevice, the second SiGe fin including a second amount of Ge which issubstantially equal to the first amount, forming an SiO₂layer on thefirst SiGe fin, forming a germanium-containing layer on the second SiGefin and on the protective layer on the first SiGe fin, and performing ananneal to react the germanium-containing layer with a surface of thesecond SiGe fin such that the surface of the second SiGe fin includes athird amount of Ge which is at least 20% greater than the second amount,a temperature of the anneal being no greater than 700° C., and theanneal being performed in a nitrogen ambient. After the performing ofthe anneal, the second SiGe fin includes a compressive strain in avertical direction of at least 1 Gpa.

With its unique and novel features, the exemplary aspects of the presentinvention may provide a semiconductor device with a first SiGe finhaving a tensile strain, and a second SiGe fin having a compressivestrain in a vertical direction.

BRIEF DESCRIPTION OF THE DRAWINGS

The exemplary aspects of the present invention will be better understoodfrom the following detailed description of the exemplary embodiments ofthe invention with reference to the drawings, in which:

FIG. 1 illustrates a method 100 of forming a semiconductor device,according to an exemplary aspect of the present invention.

FIG. 2 illustrates a semiconductor device 200, according to an exemplaryaspect of the present invention.

FIG. 3 illustrates a strain on a SiGe layer 350 (e.g., Si_(1-x)Ge_(x))formed on a Si substrate 305, before being treated (e.g. by reactingwith a germanium-containing layer), according to an exemplary aspect ofthe present invention.

FIG. 4A illustrates a semiconductor device including a semiconductorsubstrate 405 (e.g., silicon) having an nFET side and a pFET side whichare separated by an STI 404, according to an exemplary aspect of thepresent invention.

FIG. 4B illustrates forming a protective layer 409 (e.g., SiO₂) on thenFET side of the semiconductor substrate 405, according to an exemplaryaspect of the present invention.

FIG. 4C illustrates forming a germanium-containing layer 411 on the nFETside and pFET side of the semiconductor substrate 405, according to anexemplary aspect of the present invention.

FIG. 4D illustrates the performing of an anneal, according to anexemplary aspect of the present invention.

FIG. 5A illustrates a graph plotting binding energy v. normalized Ge 3dintensity, according to an exemplary aspect of the present invention.

FIG. 5B illustrates a graph plotting binding energy v. normalized Si2pintensity, according to an exemplary aspect of the present invention.

FIG. 5C illustrates an exemplary reaction in the performing of theanneal, according to an exemplary aspect of the present invention.

FIG. 6A illustrates removing an unreacted portion of thegermanium-containing layer 411 and the protective layer 409, accordingto an exemplary aspect of the present invention.

FIG. 6B illustrates a detailed view of the SiGe fin 420 after theanneal, according to an exemplary aspect of the present invention.

FIG. 6C is a graph plotting Ge in a SiGe channel vs. strain, accordingto an exemplary aspect of the present invention.

DETAILED DESCRIPTION

The invention will now be described with reference to FIGS. 1-4C, inwhich like reference numerals refer to like parts throughout. It isemphasized that, according to common practice, the various features ofthe drawing are not necessarily to scale. On the contrary, thedimensions of the various features can be arbitrarily expanded orreduced for clarity. Exemplary embodiments are provided below forillustration purposes and do not limit the claims.

Related art VFETs have a problem. In particular, a SiGe channel is veryattractive for a high performance FinFET structure due to thecompressive strain along the sidewall channel direction. However,vertical channel direction will have the tensile strain, resulting inthe degradation of SiGe vertical pFET performance.

Cladding epitaxial growth on the fin for strain engineering is notsuitable due to surface roughness and orientation dependent growth rate,which leads to the variation of device performance.

There are no known arts to form vertical transistors (e.g.,complementary metal oxide semiconductor (CMOS) transistors withtensile-strained and compressively-strained SiGe channels, because ofdifficulties in controlling the strain in a vertically standing SiGechannel on a silicon substrate.

An exemplary aspect of the present invention may address the problems ofrelated art devices.

FIG. 1 illustrates a method 100 of forming a semiconductor device,according to an exemplary aspect of the present invention.

As illustrated in FIG. 1 , the method 100 includes forming (110) firstand second SiGe fins (e.g., an nFET fin and a pFET fin, respectively) ona substrate, forming (120) a protective layer (e.g., SiO₂) on the firstSiGe fin, forming (130) a germanium-containing layer (e.g., a GeO₂layer) on the second SiGe fin and on the protective layer on the firstSiGe fin (e.g., depositing GeO₂ by atomic layer deposition (ALD)), andperforming (140) an anneal to react the germanium-containing layer witha surface of the second SiGe fin.

The germanium-containing layer may include any layer that containsgermanium (e.g., GeO₂) and may be reacted with the SiGe in the surfaceof the first and second SiGe fins so as to increase the ratio ofgermanium to silicon at the surface. The protective layer may includeany layer (e.g., SiO₂) that can “protect” the SiGe fin by keeping thegermanium-containing layer from reacting with the surface of the SiGefin.

The method 100 may also include forming a bottom source/drain (S/D)region and a bottom spacer on the substrate. In this case, the first andsecond SiGe fins may be formed on the bottom S/D region.

FIG. 2 illustrates a semiconductor device 200, according to an exemplaryaspect of the present invention. The semiconductor device 200 may bemade, for example, by using the method 100.

As illustrated in FIG. 2 , the semiconductor device 200 includes a firstSiGe fin 210 formed on a substrate 205 and including a first amount ofGe. The semiconductor device further includes a second SiGe fin 220formed on the substrate and including a central portion 220 b includinga second amount of Ge which is substantially equal to the first amount,and a surface portion 220 a including a third amount of Ge which is atleast 20% greater than the second amount.

The first SiGe fin 201 may include a tensile strain, and the second SiGefin 220 may include a compressive strain in a vertical direction of atleast 1 Gpa.

The substrate 205 may include, for example, a semiconductor substratesuch as a silicon substrate. The device 200 may include an nFET side anda pFET side which are separated by a shallow trench isolation (STI) 204.The first SiGe fin 210 may be formed on the nFET side on an n-type(e.g., n+) diffusion region 201 a, and the second SiGe fin 220 may beformed on the pFET side on a p-type diffusion region 201 b. The device200 may also include a bottom spacer 202 formed on the substrate 205.

In particular, the surface portion of the second SiGe fin may include atleast 40% Ge, and the central portion of the second SiGe fin may includeno more than 20% Ge.

Further, a height of the first and second SiGe fins 210, 220 in avertical direction may be in a range from 30 nm to 50 nm. The height ofthe first SiGe fin 210 in the vertical direction may be substantiallyequal to the height of the second SiGe fin 220 in the verticaldirection.

The width of the first and second SiGe fins 210, 220 in a horizontaldirection may be in a range from 5 nm to 20 nm. The width of the firstSiGe fin 210 in the horizontal direction may be substantially equal to awidth of the second SiGe fin 220 in the horizontal direction.

A thickness of the surface portion 220 a may be substantially equal to athickness of the central portion 220 b. In particular, the thickness ofthe surface portion 220 a may be in a range from 1 nm to 4 nm, and athickness of the central portion 220 b may be in a range from 1 nm to 4nm.

A SiGe finFET may have 35% greater hole mobility than an Si finFET. Thatis, there is a clear mobility benefit of the SiGe finFET over the SifinFET, leading to chip level performance gain.

FIG. 3 illustrates a strain on a SiGe layer 350 (e.g., Si_(1-x)Ge_(x))formed on a Si substrate 305, before being treated (e.g. by reactingwith a germanium-containing layer), according to an exemplary aspect ofthe present invention. A thickness of the SiGe layer 350 in a verticaldirection (e.g., z-direction) may be, for example, in a range from 30 nmto 50 nm. The SiGe layer 350 may be patterned, for example, to form aSiGe fin (e.g., SiGe channel) of a VFET.

The SiGe layer 350 includes a compressive strain in the x-direction andthe y-direction, and includes a tensile strain in the z-direction. Thus,at the time of patterning the SiGe layer 350 to form a VFET fin, theVFET fin (e.g., both the nFET fin and the pFET fin) will have a tensilestrain along the vertical channel direction.

In a case where the VFET is a pFET, this tensile strain may result in adegradation of a performance of the pFET. That is, the current flow inthe pair of SiGe vertical pFETs 300 is in a direction from the sourceregion 301 to the drain regions 303, and therefore, a tensile strain inthe vertical direction of the SiGe fin 320 (e.g., channel) (e.g., seeFIG. 3 ) may impede the current flow and degrade a performance of thepair of SiGe vertical pFETs 300.

However, an exemplary aspect of the present invention may provide amethod and process scheme for introducing compressive strain into a SiGefin (e.g., a vertically standing SiGe channel), which may improve thehole mobility wherein the SiGe fin is a SiGe fin in a pFET. Inparticular, an exemplary aspect of the present invention may form theSiGe fin by depositing a germanium-containing layer (e.g., GeO₂ layer)on the SiGe fin (e.g., SiGe channel) of the pFET, and performing ananneal to have a selective Si oxidation on the SiGe fin at a relativelylow temperature in an inert gas (e.g., nitrogen) ambient. After theanneal, a Ge-rich SiGe surface may be formed on a sidewall of the SiGefin, resulting in a compressive strain (e.g., highly-compressive strain)being applied in the vertical channel direction of the pFET.

The exemplary aspect of the present invention may only modify the SiGesurface in the pFET. That is, the exemplary aspect of the presentinvention may not modify the SiGe surface in an nFET (e.g., where thesemiconductor device is a complementary metal oxide semiconductor (CMOS)device).

Thus, the exemplary aspects of the present invention may provide aprocess scheme of channel strain engineering for a SiGe channel verticalCMOS. The channel material as deposited may include, for example, a lowGe content SiGe channel (e.g., SiGe20%). The strain may be to thevertical channel direction (for vertically transport devices) may beengineered by the exemplary aspects of the present invention, to providea tensile-strained SiGe channel for a vertical nFET, and acompressively-strained SiGe channel for a vertical pFET.

FIGS. 4A-4E illustrate a method of forming a semiconductor device (e.g.,a CMOS device having a SiGe vertical channel) according to an exemplaryaspect of the present invention.

In particular, FIG. 4A illustrates a semiconductor device including asemiconductor substrate 405 (e.g., silicon) having an nFET side and apFET side which are separated by an STI 404, according to an exemplaryaspect of the present invention.

The semiconductor device may also include a bottom spacer 402 (e.g., aSiBCN layer having a thickness in a range of 3 nm to 7 nm), an n-typediffusion region 401 a and a p-type diffusion region 401 b (e.g., abottom source/drain region), and a pair of SiGe fins (e.g., verticalchannels) 410, 420 formed on the n-type and p-type diffusion regions 401a, 401 b, respectively. A hard mask 408 a, 408 b (e.g., SiN) may beformed on the pair of SiGe fins 410, 420, respectively, for performing apatterning of the pair of SiGe fins 410, 420.

FIG. 4B illustrates forming a protective layer 409 (e.g., SiO₂) on thenFET side of the semiconductor substrate 405, according to an exemplaryaspect of the present invention. The protective layer may include anylayer (e.g., SiO₂) that can “protect” the SiGe fin 410 by keeping thegermanium-containing layer from reacting with the surface of the SiGefin 410.

As illustrated in FIG. 4B, the protective layer 409 may be formed bydeposition (e.g., chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), etc.). The protectivelayer 409 may have a thickness in a range from 1 nm to 5 nm, and mayinclude an oxide such as SiO₂.

The protective layer 409 may be conformally formed on the SiGe fin 410and the hard mask 408 a. The protective layer 409 may be patterned toremove any portion from off of the pFET side of the substrate 405.

FIG. 4C illustrates forming a germanium-containing layer 411 on the nFETside and pFET side of the semiconductor substrate 405, according to anexemplary aspect of the present invention.

The germanium-containing layer 411 may include any layer that containsgermanium (e.g., GeO₂) and may be reacted with the SiGe in the surfaceof the SiGe fin 420 so as to increase the ratio of germanium to siliconat the surface.

As illustrated on FIG. 4C, the germanium-containing layer 411 is formedon the protective layer 409 on the nFET side of the substrate 405, andon the surface of the SiGe fin 420 on the pFET side of the substrate405.

The germanium-containing layer 411 may be conformally formed on theprotective layer 409 and on the SiGe fin 420 and the hard mask 408 b.The germanium-containing layer 411 may be formed by deposition (e.g.,chemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), etc.). The germanium-containing layer 411 mayhave a thickness in a range from 1 nm to 5 nm, and may include, forexample, GeO₂ (e.g., a GeO₂ layer).

FIG. 4D illustrates the performing of an anneal, according to anexemplary aspect of the present invention.

A temperature in the performing of the anneal may be no greater than700° C., and a duration of performing the anneal may be in a range from10 seconds to 1 minute (e.g., about 30 seconds). Further, the anneal maybe performed in a nitrogen ambient.

After the performing of the anneal, the SiGe fin 420 may include acompressive strain in a vertical direction of at least 1 Gpa (e.g., 1.3Gpa or more).

In performing the anneal, the germanium-containing layer 411 may reactwith the surface of the SiGe fin 420 such that the SiGe fin 420 includesthe Ge-rich SiGe surface 420 a having a Ge content which is at least 20%greater than a Ge content of a central portion 420 b of the SiGe fin420. For example, the Ge-rich SiGe surface 420 a may include at least40% Ge, and the central portion 420 b may include no more than 20% Ge.The Ge content of the central portion 420 b may be substantially equalto a Ge content of the SiGe fin 410 on the nFET side of the substrate405.

Further, a thickness of the Ge-rich SiGe surface 420 a may be in a rangefrom 1 nn to 4 nm, and a thickness of the central portion 420 b may alsobe in a range from 1 nn to 4 nm.

Further, in the performing of the anneal, the protective layer 420protects the SiGe fin 410 and keeps the germanium-containing layer 411from reacting with a surface of the SiGe fin 410. That is, the SiGe fin410 may be substantially unchanged by the performing of the anneal.

In particular, in a case that the germanium-containing layer 411includes a GeO₂ layer, in the performing of the anneal, the GeO₂ layermay react with germanium and silicon in the surface of the SiGe fin 420according to the following two reactions:Ge+GeO₂→2GeO, andSi+GeO₂→Ge+SiO₂.

Thus, referring again to FIG. 4D, after the anneal, a product layer P(e.g., SiO2) may be formed on the Ge-rich SiGe surface 420 a.

FIGS. 5A-5E illustrate an exemplary mechanism for reacting a GeO₂ layer(e.g., the germanium-containing layer 411) with a surface of the SiGefin 420, according to an exemplary aspect of the present invention.

In particular, FIG. 5A illustrates a graph plotting binding energy v.normalized Ge 3d intensity, according to an exemplary aspect of thepresent invention.

As illustrated in FIG. 5A, the anneal causes a GeO₂ reduction, so thatthe after-anneal normalized Ge 3d intensity curve 592 is less than thebefore-anneal normalized Ge 3d intensity curve 591.

FIG. 5B illustrates a graph plotting binding energy v. normalized Si2pintensity, according to an exemplary aspect of the present invention.

As illustrated in FIG. 5B, the anneal causes a Si oxidation, so that theafter-anneal normalized Si 2p intensity curve 594 is less than thebefore-anneal normalized Si 2p intensity curve 593

FIG. 5C illustrates an exemplary reaction in the performing of theanneal, according to an exemplary aspect of the present invention.

As illustrated in FIG. 5C, where a structure including a GeO₂ layer 511formed on a SiGe layer 520 containing SiGe40%, is annealed, the resultis a SiO₂ layer 512 on a post anneal layer 520 pa including a SiGe60%surface portion 520 pa 1 and a SiGe40% portion 520 pa 2. It should benoted that a thickness of the post anneal layer 520 pa is substantiallyequal to a thickness of the SiGe layer 520.

Thus, in the anneal, Si in the SiGe (e.g., the SiGe fin 420) may beselectively oxidized due to the lower Gibbs free energy. That is, anexemplary reaction at the surface of the SiGe40% layer 520 (e.g., SiGefin 420 in FIG. 4D) is Si+Ge+2GeO₂→Ge+2GeO+SiO₂, where the product Ge isepi back (e.g., enriches the surface of the SiGe40% layer 520), theproduct 2GeO is a volatile species, and the SiO2 (e.g., oxide) is formedas a new layer.

FIG. 6A illustrates removing an unreacted portion of thegermanium-containing layer 411 and the protective layer 409, accordingto an exemplary aspect of the present invention.

As illustrated in FIG. 6A, after the performing of the anneal, anunreacted portion of the germanium-containing layer 411 and theprotective layer 409 may be removed from the SiGe fins 410, 420. Inaddition, any product from the reaction of the germanium-containinglayer 411 which is formed on the Ge-rich SiGe surface 420 a may beremoved. For example, where the germanium-containing layer 411 includesGeO₂, the SiO₂ which is a product of the reaction of GeO₂ and SiGe(e.g., see FIG. 5C) may be removed.

For example, diluted HF may be used to remove the unreacted portion ofthe germanium-containing layer 411, the protective layer 420 and thereaction product on the surface of the SiGe fin 420.

FIG. 6B illustrates a detailed view of the SiGe fin 420 after theanneal, according to an exemplary aspect of the present invention.

As illustrated in FIG. 6B, a compressive strain in the verticaldirection (Sc) may be formed in the Ge-rich SiGe surface 420 a.

FIG. 6C is a graph plotting Ge in a SiGe channel vs. strain, accordingto an exemplary aspect of the present invention.

As illustrated in FIG. 6C, a compressive strain in a SiGe channel withonly 20% Ge may be only about 1.3 GPa, whereas a compressive strain in aSiGe channel with 40% Ge may be about 2.6 GPa. Thus, for example, wherethe SiGe fin 420 is formed of SiGe with 20% Ge, the performing of theanneal may increase the compressive strain in the SiGe fin 420 by about1.3 Gpa to improve the hole mobility in in the SiGe fin 420 (e.g., apFET SiGe fin), while the SiGe fin 410 maintains a tensile-strained SiGechannel.

With its unique and novel features, the exemplary aspects of the presentinvention may provide a semiconductor device with a first SiGe finhaving a tensile strain, and a second SiGe fin having a compressivestrain in a vertical direction.

While the invention has been described in terms of one or moreembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims. Specifically, one of ordinary skill in the art willunderstand that the drawings herein are meant to be illustrative, andthe design of the inventive method and system is not limited to thatdisclosed herein but may be modified within the spirit and scope of thepresent invention.

Further, Applicant's intent is to encompass the equivalents of all claimelements, and no amendment to any claim the present application shouldbe construed as a disclaimer of any interest in or right to anequivalent of any element or feature of the amended claim.

What is claimed is:
 1. A semiconductor device comprising: a firstdiffusion region having a first conductivity type; a first SiGe finincluding a vertical channel formed on the first diffusion region; asecond diffusion region having a second conductivity type; and a secondSiGe fin formed on the second diffusion region and comprising: a centralportion of the second SiGe fin comprising a first amount of Ge; and asurface portion of the second SiGe fin comprising a second amount of Gewhich is greater than the first amount, wherein a total width of thecentral portion and the surface portion is substantially equal to awidth of the second diffusion region.
 2. The semiconductor device ofclaim 1, wherein the first diffusion region is formed on a substrate andincludes a first projecting portion, wherein the first SiGe fin isformed on the first projecting portion of the first diffusion region andcomprises the first amount of Ge, wherein the second diffusion region isformed on the substrate and includes a second projecting portion,wherein the second SiGe fin is formed on the second projecting portionof the second diffusion region, wherein the second amount of Ge is atleast 20% greater than the first amount of Ge, and wherein a thicknessof the surface portion is substantially equal to a thickness of thecentral portion, wherein the first SiGe fin and the second SiGe fin eachinclude a compressive strain in an x-direction and a y-direction, andincludes a tensile strain in a z-direction.
 3. The semiconductor deviceof claim 2, wherein the surface portion of the second SiGe fin comprisesat least 40% Ge.
 4. The semiconductor device of claim 2, wherein thecentral portion of the second SiGe fin comprises no more than 20% Ge. 5.The semiconductor device of claim 2, wherein a height of the first SiGefin in a vertical direction is substantially equal to a height of thesecond SiGe fin in the vertical direction, and a width of the first SiGefin in a horizontal direction is equal to a width of the second SiGe finin the horizontal direction.
 6. The semiconductor device of claim 2,wherein a thickness of the surface portion of the second SiGe fin is ina range from 1 nm to 4 nm.
 7. The semiconductor device of claim 2,wherein the first SiGe fin comprises a tensile strain.
 8. Thesemiconductor device of claim 2, wherein the second SiGe fin comprises acompressive strain in a vertical direction of at least 1 Gpa.
 9. Thesemiconductor device of claim 2, further comprising: an nFET and a pFET,the first SiGe fin comprising a fin of the nFET and the second SiGe fincomprising a fin of the pFET.
 10. The semiconductor device of claim 2,further comprising: a bottom spacer formed on the first and seconddiffusion regions, the first and second projecting portions projectingthrough the bottom spacer and contacting the first and second SiGe fins,respectively, an nFET and a pFET, the first SiGe fin comprising a fin ofthe nFET and the second SiGe fin comprising a fin of the pFET, andwherein the second SiGe fin comprises a compressive strain in a verticaldirection of at least 1 Gpa.
 11. A semiconductor device comprising: afirst diffusion region having a first conductivity type; a first SiGefin formed on the first diffusion region and comprising a first amountof Ge which is no more than 20% Ge; a second diffusion region having asecond conductivity type; and a second SiGe fin formed on the seconddiffusion region and comprising: a central portion of the second SiGefin comprising the first amount of Ge; and a surface portion of thesecond SiGe fin comprising a second amount of Ge which is at least 20%greater than the first amount, wherein a total width of the centralportion and the surface portion is substantially equal to a width of thesecond diffusion region.
 12. The semiconductor device of claim 11,wherein the surface portion of the second SiGe fin comprises at least40% Ge, wherein a thickness of the surface portion is substantiallyequal to a thickness of the central portion, wherein the first SiGe finand the second SiGe fin each include a compressive strain in anx-direction and a y-direction, and includes a tensile strain in thez-direction.
 13. The semiconductor device of claim 11, wherein athickness of the surface portion of the second SiGe fin is in a rangefrom 1 nm to 4 nm.
 14. The semiconductor device of claim 11, wherein thefirst SiGe fin comprises a tensile strain.
 15. The semiconductor deviceof claim 11, wherein the second SiGe fin comprises a compressive strainin a vertical direction of at least 1 Gpa.
 16. The semiconductor deviceof claim 11, further comprising: an nFET and a pFET, the first SiGe fincomprising a fin of the nFET and the second SiGe fin comprising a fin ofthe pFET.
 17. The semiconductor device of claim 11, further comprising:an nFET and a pFET, the first SiGe fin comprising a fin of the nFET andthe second SiGe fin comprising a fin of the pFET, wherein the first andsecond diffusion regions comprise a bottom source/drain (S/D) regionformed on a substrate, the first and second SiGe fins being formed on abottom S/D region, and wherein the first SiGe fin comprises a tensilestrain.
 18. The semiconductor device of claim 17, further comprising: abottom spacer formed on the bottom S/D region; and a shallow trenchisolation formed in the substrate between the first SiGe fin and thesecond SiGe fin, the bottom spacer being formed on the shallow trenchisolation.
 19. A method of forming a semiconductor device, the methodcomprising: forming a first diffusion region having a first conductivitytype; forming a first SiGe fin on the first diffusion region; forming asecond diffusion region having a second conductivity type; and forming asecond SiGe fin on the second diffusion region, the second SiGe fincomprising: a central portion comprising a first amount of Ge; and asurface portion comprising a second amount of Ge which is greater thanthe first amount, wherein a total width of the central portion and thesurface portion is substantially equal to a width of the seconddiffusion region.
 20. The method of claim 19, wherein the firstdiffusion region is formed on a substrate and includes a firstprojecting portion, wherein the first SiGe fin is formed on the firstprojecting portion of the first diffusion region and comprises the firstamount of Ge, wherein the second diffusion region is formed on thesubstrate and includes a second projecting portion, wherein the secondSiGe fin is formed on the second projecting portion of the seconddiffusion region, wherein the second amount of Ge is at least 20%greater than the first amount, wherein the first and second diffusionregions comprise a bottom source/drain (S/D) region formed on thesubstrate, the first and second SiGe fins being formed on the bottom S/Dregion, and wherein the first SiGe fin comprises a tensile strain,wherein a thickness of the surface portion is substantially equal to athickness of the central portion, wherein the first SiGe fin and thesecond SiGe fin each include a compressive strain in an x-direction anda y-direction, and includes a tensile strain in the z-direction.